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MA4E2514 Datasheet Surmount Low And Medium Barrier Silicon Schottky Diodes

Manufacturer: Tyco Electronics (now TE Connectivity)

Overview: SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.

General Description

The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss microstrip transmission medium.

The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

Key Features

  • A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n B.

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
MACOM Logo MA4E2514 Low and Medium Barrier Silicon Schottky Diode MACOM

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